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Novel Physical Mechanisms in Electronic Materials: Opportunities for Next-Generation Devices

Author(s) Narendra Singh Lakhera, Naresh Kumar
Country India
Abstract People are now at the beginning of the age of electronic materials where device performance is determined not only by charge transport but also by the intentional use of quantum confinement, spin, topology, ionic motion, phase transitions, ferroelectric polarization and correlated many-body states. This review discusses emergent physical mechanisms defining the prospects for next generation devices beyond traditional silicon scaling. The review covers eight families of mechanisms: 2D semiconductors and van der Waals interfaces, spin-valley physics, topological surface and edge transport, spin-orbit torques and magnetic textures, permissive ionic-electronic coupling, phase-change materials, ferroelectric switching and negative capacitance, and moiré flat-band engineering. These mechanisms are evaluated with regards to device opportunity, manufacturability and remaining barriers. The bottom line is that no one family of materials is going to replace silicon in a heroic parade. A more plausible prospect is heterogeneous integration, where traditional CMOS provides dense logic while novel materials enable nonvolatile state retention, steep-slope switching, local computer-memory coupling, photonic programmability, adaptive sensing and quantum functionality. In the short term, the most promising candidates are ferroelectric hafnium oxide devices, resistive or phase-change in-memory computing elements, 2D semiconductor channels for extreme electrostatic control and spintronic memory or logic blocks. Longer-term opportunities include topological interconnects, allotonic information processing and moiré quantum simulators, if problems of materials uniformity, contact resistance, variability, thermal budgets and circuit-level reliability are resolved.
Keywords electronic materials; 2D semiconductors; spintronics; topological insulators; memristors; phase-change materials; ferroelectrics; negative capacitance; moiré materials; neuromorphic computing
Published In Volume 7, Issue 6, June 2026
Published On 2026-06-18
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IJLRP's Crossref DOI prefix is
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